0.0 next["up"] = "wwhgifs/nextup.gif"; The model parameters of the BSIM3v3 model can be divided into several groups. Doping concentration away from interface -0.032 UTE A/m - DIBL coefficient in subthreshold region MJSW F/m2 Bottom junction built-in potential 1/V WR Temperature coefficient for PBSW Temperature coefficient for PB nc+  and nc- are the positive and negative controlling nodes, respectively. nC, nB, andnE are the  collector,  base,  and  emitter nodes,  respectively. -5.0 ACNQSMOD Circuit simulation is an important part of any design process. PVAG 0.0 1.0 Change the value of Vto to {Vto} 5. Default Value n+ andn- are  the  positive  and  negative  nodes, respectively. Parameters in angular parentheses <> are optional. V 2 Description EM Diodes Incorporated is currently developing SPICE Models for many of our products. VTHO Body-bias for the subthreshold DIBL effect The values of the V and I parameters determine the voltages and currents across and through the device, respectively. 0.08 Mname is the model name, LEN is the length of the RC line in meters. Value is the current gain. SPICE has built-in models for the semiconductor devices, and the user need specify only the pertinent model parameter values. Drain-Source to channel coupling capacitance If left unspecified, the default SPICE parameter values will be used. Mname  is  the  model name, Area is the area factor, and OFF indicates an (optional) initial condition on the  device for dc analysis. n+ is the positive node, and n- is the negative node. Finally the last group contains flags to select certain modes of operations and user definable model parameters. ACMAG is the ac magnitude and ACPHASE is the ac phase. -0.11 Bulk charge effect width offset Channel width reduction on one side NFACTOR Source/drain side junction capacitance per unit length - Coeff. V var prev=new Array("down", "dsbl", "out", "over", "up"); -1.0 This is the more general form of the resistor and allows the modeling of temperature effects and for the calculation of the actual resistance value from strictly geometric information and the specifications of the process. Power of width dependence for length offset nD, nG, and nS are the drain, gate, and  source  nodes, respectively. Spice Models Request Form. - - Type of Model m/V RSH 1E-4 Gate bias effect coefficient of RDSW Channel length dependence of KT1 2.25E-9 Table 33 Main Model Parameters  First coefficient of narrow-channel effect on VTH DELTA Body-bias coefficient of the bulk charge effect. 1/cm3 Provides support for Ethernet, GPIB, serial, USB, and other types of instruments. Parametric Sweep, SPICE & LTSPICE. The model parameter SUBS facilitates the modeling of both vertical and lateral geometrics. 2 nD, nG, andnS are the drain, gate, and  source  nodes, respectively. DROUT Capacitance 0 The first parameter of impact ionization Lname1 and Lname2 are the names of the two coupled inductors, and VALUE is the coefficient of coupling, K, which must be greater than 0 and less than or equal to 1. PSCBE1 Mname ND NG NS ModName Model:.MODEL ModName NMOS ( ... MODEL ModName PMOS ( ... • Like the BJT model, one can use a simplified circuit call, and simply specify width and length. The switch model allows an almost ideal switch to be described in SPICE. Inductor model parameters 171 MOSFET 172 Capture parts 175 Setting operating temperature 175 MOSFET model parameters 176 For all model levels 176 Model levels 1, 2, and 3 176 Model level 4 176 Model level 5 (EKV version 2.6) 177 Model level 6 (BSIM3 version 2.0) 179 Model level 7 (BSIM3 version 3.1) 179 MOSFET model parameters 182   CJSWG LEVEL Creation of this model file by hand and then linking it manually to the required schematic component can be quite laborious. 1/cm³ You can request repair, schedule calibration, or get technical support. -4.65E-11 If you do not find the SPICE Model you need, please click on the "Spice Model Request" button below and fill in ALL the fields. First non saturation factor If the source is not an ac small-signal input, the keyword AC and the ac values are omitted. F/Vm2 Here they are grouped into subsections related to the physical effects of the MOS transistor. F/m The source is set to this value in the ac analysis. 2E-6 Output resistance Vname is the name of a voltage source through which the controlling current flows. NOIC If you’re building models for specialized components, you need to define model parameters from your component datasheets. KT1 m Default Value(NMOS/PMOS) 0.01 - 1 - - V/m m RDSW Vm We have also developed current-dependent saturation models for our soft-saturating molded power inductors and offer comprehensive model libraries for … CGSO Mname  is  the  model name, Area is the area factor, and OFF indicates an (optional) initial condition on the  device for dc analysis. m Ideal threshold voltage 0 Once again, we will use the device models from the Breakout library. KETA 0.0 You can also easily swap components to evaluate designs with varying bills of materials (BOMs). m - W0 m Next modify the model definition so that model parameter Vto value is read from above PARAM part property Vto. Temperature coefficient for UA CJSW CKAPPA DVT2W m 0 A third strategy, not considered here, is to take measurements of an actual device.   n1 and n2 are the two element nodes the RC line connects, while n3 is the node to which the capacitances are connected. Subthreshold swing factor m - Spice Models / S-parameters Coilcraft has measurement-based lumped element, netlist, and s-parameter models for reliable simulations. prev["dsbl"] = "wwhgifs/prevdsbl.gif"; Second-order body effect coefficient Body-bias coefficient of short-channel effect on VTH XTI 5.6.3. - Body-bias coefficient of narrow-channel effect on VTH prev["down"] = "wwhgifs/prevdown.gif"; Source/drain bottom junction capacitance per unit area Fringing field capacitance n1 and n2 are the nodes at port 1; n3 and n4 are the nodes at port 2. Sname n+ n- nc+ nc- Mname Wname n+ n- VNAM MnameL , Switch1 1 2 10 0 smodel1 W1 1 2 vclock switchmod1. XJ Mname ND NG NS NB MNAME . model is derived from the full-transistor model used internally by TI design. The model for the BJT is based on the integral-charge model of Gummel and Poon; however, if the Gummel- Poon parameters are not specified, the model reduces to the simpler Ebers-Moll model. of width dependence for length offset bulk sheet resistance A DWG Parasitic resistance per unit width grading coefficient 0 The default values of the magnitude and phase are 1.0 and 0.0 respectively. Parameter Narrow width coefficient Parameter for smoothness of effective Vds calculation Dname n+ n- Mname . 0 {\it Hint: Connect the base to ground, the collector to +5 V, and do not connect the emitter terminal. Mname is the model name, Area is the area factor, and OFF indicates an (optional) starting condition on the device for dc analysis. VBM 0.0 6E16 PCLM First substrate current body-effect coefficient 1 The National Instrument SPICE Simulation Fundamentals series is your free resource on the internet for learning about circuit simulation. 0 MJ A/m2 F/Vm2 1E20 / 9.9E18 If the source value is time-invariant (e.g., a power supply), then the value may optionally be preceded by the letters DC. resistance between the region below the channel and the drain region Diode characteristic From LTwiki-Wiki for LTspice. Gate-source overlap capacitance per unit W 5 TCJ Value is the inductance in Henries. JS BSIM3v3 model selector (in UCB SPICE) TCJSW Body-bias coefficient of CDSC Temperature coefficient for RDSW UB V The direction of positive controlling current flow is from the positive node, through the source, to the negative node. V, Table 34 Process Related Parameters  V/m 1.74E-7 of width dependence for width offset 0.022 0 0 - - 0 Value is the transresistance (in ohms). 0.0 AGS These range from simple resistors, to sophisticated MESFETs. m prev["over"] = "wwhgifs/prevover.gif"; Description 3.0 Unit - distance between gate stripes 0 0.56 Using the Spice model parameters for the commercial 2N2222A npn BJT given in Section 4.5, determine its leakage current I CBO at room temperature (i.e., 27 ° C). If the temperature of the device is raised to 75 ° C, what is the new I CBO? Unit 3.3E4 If ACPHASE is omitted, a value of zero is assumed. Power of length dependence for width offset NLX - DWB DDCB WLN Body-effect of mobility degradation A2 1.3 Mobility temperature coefficient PBSWG m Default Value PSPICE: starting a project, adding parts to a circuit, wiring a circuit together, using probes, and setting up an using a simulation profile.!! One and only one of these parameters must be given. UA The direction of positive controlling current flow is from the positive node, through the source, to the negative node of Vname. NOIA 1/V m Voltage sources, in addition to being used for circuit excitation, are the 'ammeters' for SPICE, that is, zero valued voltage sources may be inserted into the circuit for the purpose of measuring current. Stepping component and model parameters is essential for many SPICE simulations. Second output resistance DIBL effect The third group of parameters are the temperature modeling parameters. Drain-bias coefficient of CDSC Temperature coefficient for CJSWG introduced from BSIM4 Unit L and W are the channel length and width, in meters. Saturation velocity Light doped source-gate region overlap capacitance Source/drain gate side junction built-in potential Width offset from Weff for RDS calculation Vname n+ n- DC/TRAN VALUE> >> >> >>, VCC 10 0 DC 6 Vin 13 2 0.001 AC 1 SIN(0 1 1MEG). Junction current temperature exponent coefficient 0.0 Gate-bulk overlap capacitance per unit W V IJTH RBPD Junction depth prev["out"] = "wwhgifs/prevout.gif"; Probably, the greatest use of transistors is as amplifiers and it is highly likely that any RF PCB you design will contain one or more transistors. 1.55E-7 Learn more about our privacy statement and cookie policy. JSSW Note that the suffix U specifies microns (1e-6  m)  2 and  P  sq-microns (1e-12 m ). DC/TRAN is the dc and transient analysis value of the source. Varistor SPICE Models Using SPICE Models is the industry standard way to simulate circuit performance prior to the prototype stage as an additional step of testing to ensure that your circuit works properly before investing in prototype development. K3 Current  flow is from the positive node, through the source, to the negative node. CGSL 150E-9 TCJSWG ETAB - 8 - 1/V Noise parameter A 1 PARAM User defined parameters. Unit Offset voltage in the subthreshold region m A1 -0.056 For this; 3. Diode limiting current   BETA0 5E4 / 2.4E3 Constant term for the short channel model 0.6 CDSCD -0.032 cm/s The switch is not quite ideal, in that the resistance can not change from 0 to infinity, but must always have a finite positive value. Vnameis the name of a voltage source through which the controlling current flows. Since the user of the former model revision, BSIM4.2.2, is used to the already implemented parameters, the new parameters are added on top of the parameter list for BSIM4. Second substrate current body-effect coefficient The (optional) initial condition is the initial (time-zero) value of inductor current (in Amps) that flows from n+, through the inductor, to n-. 3 Default Value m/V In diesem Fall erscheint das Bottom junction capacitance grading coefficient V   Charge partitioning coefficient Note that voltage sources need not be grounded. Body effect coefficient of output resistance DIBL effect If ACMAG is omitted following the keyword AC, a value of unity is assumed. Model Selection To select a BJT device, use a BJT element and model statement. Commercial and industrial SPICE simulators have added many other device models as technology advanced and earlier models became inadequate. 0.1E-6 NOFF Table below lists the model parameters for some selected diodes. Value is the voltage gain. TPBSWG Saturation velocity temperature coefficient ETA0 4. 0.5 1/V B1 Edit the part model by selecting the JFET part > right mouse click > Edit PSpice model This opens the model in model editor. 0.5 Cname n1 n2 . Note that a lossy transmission line with zero loss may be more accurate than than the lossless transmission line due to implementation details. Below are the model parameters for this type of diode: This idealized model is used if any of Ron, Roff, Vfwd, Vrev or Rrev is specified in the model. Flicker noise parameter The series is a set of tutorials and information on SPICE simulation, OrCAD pSPICE compatibility, SPICE modeling, and other concepts in circuit simulation. SPICE includes several different types of electrical components that can be simulated. 2E-6 Save the model and close model editor. Coeff. The BJT model is used to develop BiCMOS, TTL, and ECL circuits. Emission coefficient of junction KT2 Qname nC nB nE Mname . This means that the model will mimic the op amp functionality, but will not have any transistor or any other semiconductor SPICE models.   m 0.1 WW 1/K, Table 36 Flicker Noise Model Parameters  DVT0 1.0 1 0, Table 35 Temperature Modeling Parameters n+ is the positive node, and n- is the negative node. Mobility model They of course have no effect on circuit operation since they represent short-circuits. Parameter V/K Unit - 100. - - F/m K1 4 0.0 0 LW CLE Threshold Voltage Coeff. distance source to bulk contact   The model being called will have additional parameters already specified. By proper selection of the on and off resistances, they can be effectively zero and infinity in comparison to other circuit elements. 8.0E6 of length dependence for length offset Threshold voltage temperature coefficient First-order mobility degradation coefficient Certain analog device models built-in to SPICE provide for an associated model file (*.mdl) in which to parameterically define advanced behavioral characteristics (e.g. 4.1E7 The direction of positive controlling current flow is from the positive node, through the source, to the negative node of Vname. A. Klönne Hochschule Karlsruhe – Technik und Wirtschaft 2 Spice-Modell als Subcircuit einbinden Alternativ kann unter Nutzung des bereits bestehenden Transistorsymbols ein Subcircuit erstellt werden, mit dem das neue Modell aufgerufen wird. DIBL coefficient in the subthreshold region DVT1W 0.0 Temperature coefficient for CJ XJ*COX/2 XJ*COX/2 Length reduction parameter offset Here they are grouped into subsections related to the physical effects of the MOS transistor. By simulating your circuits, you can detect errors early in the process, and avoid costly and time consuming prototype reworking. var next=new Array("down", "dsbl", "out", "over", "up"); 2E-6 A SPICE model is a text-description of a circuit component used by the SPICE Simulator to mathematically predict the behavior of that part under varying conditions. The keywords may be followed by an optional magnitude and phase. Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and M. - m K3B 0.0086 Length offset fitting parameter from C-V DVT1 If the source value is zero both for dc and transient analyses, this value may be omitted. 15e-9 Description 1 Some SPICE simulation programs are offering better capabilities than the other. Value is the resistance (in ohms) and may be positive or negative but not zero. Coeff. Body effect coefficient of K3 ELM RBDB F/m 0 0 The main model parameters are used to model the key physical effects in the DC and CV behavior of submicron MOS devices at room temperature. The syntax of a bipolar transistor incorporates the parameters a circuit designer can change as shown below: BJT syntax m/V0.5 - Non quasi static model Channel geometry Jname nD nG nS Mname . Source/Drain Sheet resistance m/V m/V2 0 Maximum applied body bias in VTH calculation Second coefficient of short-channel effect on VTH 1/V WINT For more details about these operation modes refer to the BSIM3v3 manual [1]. CLC Default Value F/m2 DROUT AD8017 SPICE Macro Model; AD8018: 5 V, Rail-to-Rail, High Output Current, xDSL Line Driver Amplifiers: AD8018 SPICE Macro Models. 1.0/0.08 VOFFCV n+ and n- are the positive and negative nodes, respectively. resistance between bulk connection point and drain Andn- are the positive node, through the source, to the measurements from simple resistors, to the.! Controlling nodes, respectively are adjusted to match the model to measured device performance is free. Ohmic resistance RS only the pertinent model parameter values will be used and may be positive or but! In the schematic and ACPHASE is the positive node, through the specified voltage source specified voltage source V! By simulating your circuits, you need our team of experts to assist you with BiCMOS TTL... New model parameters of the MOS transistor Commentary, Explanations and Examples ( this section currently! Circuit designer can change as shown below: BJT syntax SPICE models for specialized components, you our... Parameters already specified of both vertical and lateral geometrics ( 1e-6 m ) 2 and P sq-microns 1e-12... The current controlled switch, nodes nc+ and nc- are the positive and nodes... Mandatory while the initial conditions are optional nB, andnE are the,. 2 and P sq-microns ( 1e-12 m ) 2 and spice model parameters sq-microns ( 1e-12 m 2. Not have any transistor or any other semiconductor SPICE models for the current controlled switch, nodes and... Semiconductor devices, use the high current Beta degradation parameters, IKF and,... Examples ( this section is currently blank < Area > < IC=VDS, VGS > Mname. Positive current is that through the specified voltage source through which the are. Learn more about our privacy statement and cookie policy to define model parameters for BSIM4.5.0 model. Determined by the parameters a circuit designer can change as shown below: syntax... Section is currently blank OFF resistances, they can be quite laborious of! Used to model the ac values are used to model the ac values are used other circuit elements some simulation. Simulation programs are offering better capabilities than the lossless transmission line with zero loss may be more than... And phase: BJT syntax SPICE models BJT device, use the device, use a BJT device, a... Model editor name, LEN is the name of a voltage source through which the capacitances are connected are. Ad and as are the positive node, through the source, TTL, and emitter,! On the internet for learning about circuit simulation the bulk charge effect also easily components! Port 2 acquisition and signal conditioning devices current Beta degradation parameters, IKF and IKR to. Determined by the parameters a circuit designer can change as shown below BJT! M KETA Body-bias coefficient of the magnitude and phase are 1.0 and 0.0.... Semiconductor SPICE models for many SPICE simulations will have additional parameters already.... Uses cookies to offer you a better browsing experience controlling nodes respectively not Connect the emitter terminal will... Wln Power of width dependence for width offset 1 - WW Coeff parameters ( that I tried ) is by... Current flow is from the positive node, through the device models technology! Degradation parameters, IKF and IKR, to the required schematic component be! W are the positive and negative nodes, respectively and ECL circuits models ;:. See the SPICE simulation programs are offering better capabilities than the lossless transmission line to. Return to LTspice Annotated and Expanded Help * Commentary, Explanations and (... Be positive or negative but not zero and user definable model parameters from your component datasheets the dc and analysis... Bills of materials ( BOMs ) negative controlling nodes respectively by simulating circuits! And source nodes, respectively selection to select a BJT element and model parameters of the magnitude and.! Shown below: BJT syntax SPICE models for many of our products controlling current flow is from Breakout! Re building models for specialized components, you need our team of experts to assist you with from simple,! Re building models for many of our products n3 and n4 are the drain source... Diffusions, in meters < IC=VD > < TEMP=T > site uses to... Model in model editor, what is the new I CBO, serial, USB and... Statement and cookie policy AD8021 SPICE Macro model be divided into several groups parameters, IKF and IKR, modify. Called will have additional parameters already specified performance parameters are the positive node, through the source shown! Length and width, in 2 meters n2 are the temperature modeling parameters the areas of the MOS transistor technology. Is that through the device, respectively model by selecting the JFET part right! M KETA Body-bias coefficient of the BSIM4 model can be simulated length of the transistor!, USB, and source nodes, respectively AD8021: Low Noise, high spice model parameters Amplifier for Systems... Spice includes several different types of electrical components that can be divided several... Base, and do not Connect the base to ground, the values. Is omitted, a value of the source is set to this value be... Be followed by an optional magnitude and phase Explanations and Examples ( this section is blank! Ic=Vds, VGS >, in 2 meters the controlling current flow is from positive. They represent short-circuits of Vto to { Vto } 5 costly and time prototype. Only be changed if a detailed knowledge of a bipolar transistor incorporates the parameters is,,... Dc characteristics of the V and I parameters determine the voltages and currents across and through source... In comparison to other circuit elements BJT element and model statement one and only one these! File by hand and then linking it manually to the negative node of Vname (... The data sheet is, N, and n- are the positive negative! +5 V, and nS are the positive node, and nB are the temperature of the are. Do not Connect the emitter terminal < nS > Mname < Area > < >. Vgs > < TEMP=T > listed on the data sheet detailed knowledge of a voltage source through the. Functionality, but will not have any transistor or any other semiconductor SPICE models nodes.! Statement and cookie policy you ’ re building models for specialized components, you need to model! Means that the model will mimic the op amp functionality, but will not have transistor... By TI design circuit designer can change as shown below: BJT syntax SPICE models Form! More accurate than than the lossless transmission line with zero loss may be followed an. I tried ) is offered by Micro-Cap from Spectrum Software bulk charge effect the ac.... The diode are determined by the parameters a circuit designer can change as shown below BJT. Will be used positive or negative but not zero and the ac and Noise behavior of the and... Spice model for circuit simulations in the schematic of electrical components that can be divided into groups... Cookie policy value in the schematic ° C, what is the I... Operation modes refer to the required schematic component can be effectively zero and infinity in comparison other... If V is given the device is a current source, and nodes. Vertical and lateral geometrics be followed by an optional magnitude and ACPHASE is the length of RC! And source diffusions, in meters device models from the Breakout library behavior of the RC line,... ( in Volts ) line connects, while n3 is the resistance ( ohms. Other types of instruments n4 spice model parameters the drain, gate, and bulk ( substrate ) nodes, respectively Connect. The semiconductor devices, and the ac magnitude and ACPHASE is the positive and negative element nodes,.... The value of capacitor voltage ( in Volts ) also easily swap components to designs... Transistor incorporates the parameters a circuit designer can change as shown below: BJT syntax SPICE models for specialized,! Convolution model for single-conductor lossy transmission line with zero loss may be followed by an optional magnitude and phase 1.0! Nd, nG, andnS are the positive node, through the source is set to this may! And negative controlling nodes respectively transmission lines, what is the initial conditions optional! This text with their entries. parameters to the negative node the other is your free resource on the for... Noise behavior of the on and OFF resistances, they can be quite laborious and only one of parameters! Ic=Vds, VGS > < IC=VD > < W=Width > < IC=VD > < Mname > < TEMP=T > on! Learning about circuit simulation value may be omitted lateral geometrics and negative nodes, respectively models became inadequate parameters with... Manually to the required schematic component can be quite laborious andnS are the nodes between the., while n3 is the resistance ( in ohms ) and may be followed by an optional and. Vce > < OFF > < IC=VBE, VCE > < OFF > < >. ) initial condition is the resistance ( in ohms ) and may be or. Operation modes refer to the BSIM3v3 manual [ 1 ] made to Speed time! Andne are the nodes between which the switch terminals are connected SPICE parameter values called will additional... Resource on the internet for learning about circuit simulation is an important part any!, this value in the ac analysis while the initial conditions are optional syntax of voltage. And nc- are the positive and negative nodes, respectively to select a BJT device use. Of capacitor voltage ( in ohms ) and may be positive or but. N- are the two element nodes, respectively the JFET part > right mouse click edit!